Scanning microscopy with slow electrons

Scanning microscopy with slow electrons utilizes the principle of so-called cathode lens retarding of the electron beam just in front of the sample surface. In this way the electron beam is formed and focused at high energy and so the illuminating spot governing the image resolution can be very small for all energies of electrons between 15 keV and 1 eV. The unique detector solution provides very high efficiency of signal collection and high amplification even at the lowest energies.

Advantages and application examples:


  • Diminished volume of the interaction of slow electrons inside the sample and thus improved resolution for real samples and enhanced surface sensitivity.
  • Increased signal of secondary electrons improving the signal-to-noise ratio in the image signal.
  • Imaging of nonconductive samples at optimum energy of electrons not causing local charges even under high vacuum
  • In depth analysis of samples via energy based tomography.
  • Imaging of dopants in semiconductors and measurement of their density.
  • Tailoring the electron energy to maximum contrast between different materials.
  • Acquisition of signal electrons backscattered under large angles from the optical axis, bearing enhanced crystallinity contrast.